Add the Sunday Tutorial by Logging Back into Your Registration
#ALDALE2023
AVS_grayscale
AVS ALD-ALE 2023 207x46

Program

Technical Program

The AVS 23rd International Conference on Atomic Layer Deposition (ALD 2023) featuring the 10th International Atomic Layer Etching Workshop (ALE 2023) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and atomic layer etching.  Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. The conference will take place Sunday, July 23-Wednesday, July 26, 2023, at the Hyatt Regency Bellevue in Bellevue, Washington (East Seattle).

As in past conferences, the meeting will be preceded (Sunday, July 23) by one day of tutorials and a welcome reception. Sessions will take place (Monday-Wednesday, July 24-26) along with an industry tradeshow. All presentations will be audio-recorded and provided to attendees following the conference (posters will be included as PDFs). Anticipated attendance is 700+.

Awards: Both ALD and ALE will recognize student achievement with awards for the best student posters and/or talks. See Awards Page

How to View the Technical Program

ALD Plenary Speaker

Markku Leskelä
(University of Helsinki, Finland)

ALE Plenary Speaker

Tristan Tronic
(Intel, USA)

ALD Innovator Awardee Speaker

ALD & ALE Joint Speakers

  • Michael Nolan (Tyndall National Institute, University College Cork, Ireland)
  • Greg Parsons North Carolina State University, USA)

ALD & ALE Tutorial Speakers

Sunday, July 23, 2023

1:00 PM Design Rules for Precursors and Why You Should Break Them Seán Barry, Carleton University, Canada
1:45 PM A Brief Introduction to Low-Temperature Plasmas: Physics, Diagnostics, and Applications in Atomic Layer Processing Mari Napari, King’s College London
2:30 PM The Application of Atomic Layer Deposition for Batteries Lei Cheng, Argonne National Laboratory
3:30 PM Surface Reaction Mechanisms of Thermal and Plasma-Enhanced Atomic Layer Etching (Ale) Processes Satoshi Hamaguchi, Osaka University, Japan
4:15 PM Surface Functionalization of Powder Materials using Fluidized Bed Reactor ALD Se-Hun Kwon, Pusan National University
5:00 PM Atomic Layer Deposition of Active and Passive Films for Electronic Devices John Ekerdt, University of Texas at Austin

ALD Invited Speakers

  • Chunmei Ban (University of Colorado, USA)
  • Ashley Bielinski (Argonne National Laboratory, USA)
  • Miin-Jang Chen (National Taiwan University, Taiwan)
  • Anna Coclite (University of Graz, Austria)
  • Mariona Coll (ICMAB-CSIC, Barcelona, Spain)
  • Daire Cott (IMEC, Belgium)
  • Jiyoung Kim (University of Texas at Dallas, USA)
  • Seiyon Kim (SK Hynix, South Korea)
  • Masaharu Kobayashi (University of Tokyo, Japan)
  • Luca Lamagna (STMicroelectronics, Italy)
  • Lisa McElwee-White (University of Florida, USA)
  • Charles Mokhtarzadeh (Intel, USA)
  • Michelle Paquette (University of Missouri Kansas City, USA)
  • Tania Sandoval (Technical University Federico Santa Maria, Chile)
  • Joachim Schnadt (Lund University, Sweden)
  • Hyunjung Shin (Sungkyunkwan University, Republic of Korea)
  • David Thompson (Applied Materials Inc., USA)
  • Min Zhang (Peking University, China)
ALE Invited Speakers

  • Paul Abel (TEL, USA)
  • Heeyeop Chae (Sungkyunkwan University, Republic of Korea)
  • Akiko Hirata (SONY Corporation, Japan)
  • Xiao Hu (Chemnitz University of Technology, Germany)
  • Anil Mane (Argonne National Lab, USA)
  • Austin Minnich (Caltech, USA)
  • Kazunori Shinoda (Hitachi, Japan)
  • Thomas Tillocher (Universite d’Orleans, France)